Company Profile

United Silicon Carbide Inc (AKA: USCI)
Profile last edited on: 1/31/2022      CAGE: 1H9B2      UEI: E1ZMN21UWJK5

Business Identifier: Enableing affordable power efficiency in key markets: driving new, greener economy.
Year Founded
1998
First Award
1999
Latest Award
2018
Program Status
Inactive (Acquired)
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Location Information

650 College Road East
Princeton, NJ 08540
   (732) 355-0550
   info@unitedsic.com
   www.unitedsic.com
Location: Single
Congr. District: 12
County: Mercer

Public Profile

Fairly SBIR-active from soon after the firm was founded and continuing steadily, United Silicon Carbide Inc, - a Rutgers University spin-out - is a semiconductor company pioneering the development of high efficiency Silicon Carbide (SiC) power transistors and devices. Markets ddressed include wind and solar power generation, electrical based transportation such as automobiles and next generation trains and intelligent Smart-Grid technologies, Higher efficiency power generation and conversion, motor control and numerous other applications that require higher efficiency and compact designs with demanding thermal constraints are also target applications. Products include Schottky Diodes, SiC Cascodes, and JFETS. In November 2021 it was announced that United Silicon Carbide had been acquired by the North Carolina based, publicly traded company US Semiconductor company Qorvo Inc., (NASDAQ:QRVO)

Extent of SBIR involvement

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Synopsis: Awardee Business Condition

Employee Range
20-24
Revenue Range
2M-2.5M
VC funded?
Yes
Public/Private
Privately Held
Stock Info
----
IP Holdings
20-24

Awards Distribution by Agency

Most Recent SBIR Projects

Year Phase Agency Total Amount
2018 1 Navy $124,987
Project Title: High Power Solid State Electronic Switch for Use in Exploding Foil Initiator Applications
2017 1 NASA $124,330
Project Title: Silicon Carbide Gate Driver
2017 2 DOE $1,162,388
Project Title: High Current SiC Cascodes for Electric Drive Vehicle Power Electronics
2016 1 Navy $79,848
Project Title: 6500V-100A SiC JFET-Based Half-Bridge Module
2016 2 NASA $873,867
Project Title: Extreme Environment Electronics based on Silicon Carbide

Key People / Management

  John Christopher Dries -- President, Chief Executive Officer

  Peter Alexandrov -- Senior Research Engineer

  Bhalla Anup -- VP of Engineering

  John Carter -- Senior Research Engineer

  Marshall Cohen -- Chairman of the Board

  Betsy Cotton -- Chief Financial Officer

  Leonid Fursin -- Senior Research Engineer

  Mari Anne Gagliardi -- Vp Operations

  John Hostetler -- Semiconductor Manufacturing Specialist

  Scott Kelly -- Business Official

  Larry X Li -- Senior Research Engineer

  Xueqing (Larry) Li -- Senior Research Engineer

  George Lin -- Vice President

  Zhiyong Lin

  Matthew O'Grady -- Lead IC Engineer

  Maurice Weiner -- Vice President, Research & Development