Exploding Foil Initiators (EFI) are commonly used as a detonator for the initiation of missiles, kill vehicles, or rocket motors. High voltage safe and arm (S&A) firing switches are critical components within the EFI. Using higher voltage and higher current capability switches is beneficial for improved EFI efficiency. Due to the critical nature of the S&A firing switches, they must be able to function reliably in radiation environments and high temperatures. Use of devices that are fundamentally tolerant to the naturally occurring radiation and temperature environmental conditions can eliminate or reduce the need for shielding and temperature control systems. Therefore using radiation hardened high voltage switches is beneficial for the development of high efficiency and high reliability EFI. During this program, United Silicon Carbide will extend the capability of its SiC JFET power switch technology to produce high pulse current capable, high voltage, radiation hard, high-temperature capable Silicon Carbide (SiC) Junction Field Effect Transistor (JFET) cascode switch suitable for EFI applications. The switch would be compatible with natural space radiation environment, and would be able to survive through radiation pulses induced by strategic nuclear events.