SBIR-STTR Award

6500V-100A SiC JFET-Based Half-Bridge Module
Award last edited on: 10/18/2018

Sponsored Program
SBIR
Awarding Agency
DOD : Navy
Total Award Amount
$79,848
Award Phase
1
Solicitation Topic Code
N161-066
Principal Investigator
Xueqing (Larry) Li

Company Information

United Silicon Carbide Inc (AKA: USCI)

650 College Road East
Princeton, NJ 08540
   (732) 355-0550
   info@unitedsic.com
   www.unitedsic.com
Location: Single
Congr. District: 12
County: Mercer

Phase I

Contract Number: N00014-16-P-2063
Start Date: 7/11/2016    Completed: 5/10/2017
Phase I year
2016
Phase I Amount
$79,848
Over the last decade, tremendous efforts have been invested in developing high voltage SiC power switches. At present, SiC unipolar power switches including MOSFETs and normally-on JFETs have been commercially available at voltage ratings up to 1700V. However, medium voltage (>3300V) SiC power devices are still not commercially available mainly because of the very high cost of high quality medium-voltage SiC epi-wafers. There is a strong need for a cost-effective medium-voltage SiC power switch that can be commercialized and moved into mass production quickly. In this program, United Silicon Carbide, Inc. (USCi) proposes to develop such a 6.5kV SiC power module based on the technology of series-connecting multiple commercial available low-voltage (1,200V to 1,700V) SiC normally-on JFETs. The proposed approach has substantial performance advantages over the medium-voltage SiC MOSFET solution. For example, the proposed approach has a higher threshold voltage (>3V at 150C) providing higher noise immunity, can be driven by a conventional gate driver for ease to use, and has an excellent built-in antiparallel diode with a knee voltage of only 0.7V.

Benefit:
The proposed medium-voltage SiC power switch module exploits all the material advantages of SiC technology, such as high voltage, high frequency and high temperature operations, in a most cost-effective way, allowing quick widespread penetration of SiC technology into next generation high-performance and high-power density multi-megawatt power electronic converters for future Navy all-electric warship propulsion motor drives and shipboard power distribution. The applications of the proposed SiC power module also include high voltage motor drives and traction systems, high-voltage pulse generators, high-voltage dc transmission systems (HVDC), flexible ac transmission systems (FACTS), wind and solar inverters, and energy storage & management, etc.

Keywords:
Cascode, Cascode, Normally-on JFET, series connection, Power Module, Medium Voltage, Power MOSFET, silicon carbide

Phase II

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Start Date: 00/00/00    Completed: 00/00/00
Phase II year
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