Inston Inc. is a startup company which has developed and is working to commercialize a revolutionary new type of magnetic random access memory (MeRAM). With ties to and partnerships with research institutions and industry partners, The firm's patented MeRAM technology offers a combination of nonvolatile operation, ultralow power consumption, high density, high speed, and scalability compared to competing nonvolatile memory technologies, including other types of magnetic memory. MeRAMTM is a patented nonvolatile memory technology.The result of several years of R&D at UCLA and Inston, it combines more than 10x advantages in power efficiency, density, speed, and endurance compared to both existing and emerging alternatives, including Resistive and Magnetic RAM. MeRAM uses an innovative voltage-controlled magnetic bit design, along with a CMOS-compatible array structure with 3D backend stacking capability, to simultaneously offer the ultimate in high performance and bit capacity. It is ideal for a wide range of applications from enterprise data storage, to embedded and discrete memory for wireless systems.