Avalanche Technology is structured around Spin Transfer Torque Magnetic RAM (STT-MRAM) non-volatile memory leveraging perpendicular magnetic tunnel junction (pMTJ) cell structure manufactured on 300mm standard CMOS process. Anchored in more than 300+ granted patents around cell, circuit, and system design leveraging MRAM, the firm's technology and products provide breakthrough speeds, unlimited endurance and non-volatility while reducing power and cost. These capabilites it is suggested will serve and exceed client objectives as a replacement for SRAM, eFlash, and ROM in embedded applications in addition to discrete SRAM, non-volatile SRAM, NOR and DRAM.
