Athena Energy LLC has been focusing from its start on the high-temperature silicon carbide research efforts of its founder. Athena Energy will collaborate with CPES to transfer advanced packaging techniques. Given that the power switch module will use silicon-carbide, SiC switches and diodes, packaging for operation at high temperature, frequency, and power is necessary. CPES will assist Athena Energy on developing packaging designs that place an emphasis on low thermal resistance and reduced electrical impedance packaging techniques within the semiconductor module. A system capable of operating over the temperature range of -40 to 250°C is the desired result. This module must also survive these temperatures with the requisite performance characteristics (dielectric, mechanical, thermal, and impedance). Material support in the form of SiC switches has been granted with both MOSFETs from CREE semiconductor and JFET devices from Northrup Grumman Corporation
