This Small Business Innovation Research Phase I project proposes to apply the infinite velocity method for quantification of elements to time-of-flight secondary ion mass spectrometry (TOF-SIMS) and to evaluate the concept for semiconductor testing. A key requirement to improve semiconductor performance and efficiency will be better analysis procedures for quantification of elements in smaller features and thinner layers. The infinite velocity method stems from the observation that secondary ion yields per unit of sample concentration tend to a single value for all elements at infinite velocity (high ion energy) if the ion yields are first corrected for sputter yield and instrument transmission. In Phase 1, the efficacy of this concept will be demonstrated. Quantitative elemental analysis of thin films and small features in semiconductors are marketed as commercial analytical services and instrument upgrades. Estimated revenues for this small firm are $2,000,000 per year, or larger if quantification can be performed at the expected detection limits.
