In this project, Arktonics proposes to develop monolithically integrated high-performance (Si)GeSn lasers by using the novel aspect ratio trapping (ART) growth technology. The proposed transformative laser architecture is expected to fundamentally address the long-standing challenges of the missing high-performance light emitter to complete the whole suite of Si-photonics to enable many new applications, such as, high speed data optical interconnect, integrated microwave photonics, and on-chip low-cost chemical sensing. The Phase-I project is focused on the feasibility study for developing ART grown SiGeSn lasers by i) conducting experimental investigation of ART (Si)GeSn growth and material characterization to effectively evaluate the technical pathway for the growth; ii) conducting device design simulation and prototype device development to establish the baseline characteristics and scale up the device for power output; iii) Investigating device fabrication to be fully integrated with Si-CMOS.
