SBIR-STTR Award

Advancing High-Power Diamond Devices Towards Commercialization
Award last edited on: 7/22/2020

Sponsored Program
SBIR
Awarding Agency
NSF
Total Award Amount
$1,174,995
Award Phase
2
Solicitation Topic Code
S
Principal Investigator
Manpuneet K Benipal

Company Information

ADVENT Diamond Inc (AKA: Advent Diamond LLC)

1475 North Scottsdale Road Suite 200
Scottsdale, AZ 85257
   (480) 236-0690
   N/A
   www.adventdiamond.com
Location: Single
Congr. District: 09
County: Maricopa

Phase I

Contract Number: 1747133
Start Date: 1/1/2018    Completed: 9/30/2018
Phase I year
2018
Phase I Amount
$224,996
TheĀ broader impact/commercial potential of this Small Business Innovation Research (SBIR) Phase I project is the innovation of diamond technologies that will enhance the efficiency and reliability of electric vehicles, thus supporting the development of green technology and reduction of CO2 emissions. Specifically, diamond diodes will reduce powertrain losses by about a third and thus directly translate into a 10% increase in electric power vehicle (EPV) range. While the impact of diamond diodes is significant, the development of this technology is also intended to advance diamond power devices. Additional diamond components - such as insulated gate bipolar transistors (IGBTs) - will increase the efficiency and reliability of electric vehicles even further. Moreover, the successful commercialization of diamond will ultimately affect many power markets in addition to EPVs: including converters and inverters in geothermal drilling, aerospace, and power grids; high-frequency applications such as radar and communication systems; and extreme environment electronics relevant to the nuclear industry and space exploration, such as the exploration of Venus.The proposed project expects the fabrication of diamond freewheeling Schottky-PIN diodes for EPVs. These devices will utilize lab-grown diamond to produce and test PIN diodes. While growth techniques have recently been developed to enable to the fabrication of such structures, much innovation is still needed to facilitate scalability and commercialization of diamond devices. Therefore, in Phase I, the scope of research will consist of the following activities to make diamond diodes for powertrain converters and inverters in EPVs: (a) demonstrate the expected performance of diamond freewheeling diodes using simulations, (b) control the doping concentrations and thickness of single-crystal diamond layers, (c) develop scalable fabrication and patterning processes for diamond devices, (e) determine electrical characteristics of diamond PIN diodes, and (f) investigate the reliability and possible failure mechanisms of packaged diamond PIN diodes. A significant challenge for diamond devices for power applications will be the achievement of cost parity. Considering the relatively high cost of diamond substrates, an innovative commercialization strategy will be adapted to keep initial costs low, allowing diamond devices to achieve cost parity faster.

Phase II

Contract Number: 1951263
Start Date: 5/15/2020    Completed: 4/30/2022
Phase II year
2020
(last award dollars: 2022)
Phase II Amount
$949,999

The broader impact/commercial potential of this Small Business Innovation Research (SBIR) Phase II project is the improvement of high-power devices that will enhance the efficiency and reliability of electric vehicles (EVs) and their charging stations. The development of the proposed high-power devices will potentially reduce EV charging time to less than 10 minutes by increasing the charging module's power from 300 kW to over 1 MW. Furthermore, this technology can potentially increase the range of electric vehicles significantly by increasing efficiency, and miniaturizing power modules by eliminating cooling systems. These systems are based on diamonds, which have special properties when used in advanced devices, and will be easily extended to applications requiring high-temperature operation (above 300 C) and high-power switching capabilities, such as geothermal drilling, aerospace, and power grids, as well as application in extreme environments and space exploration. This Small Business Innovation Research (SBIR) Phase II project will fabricate next generation semiconductor high-power diodes (1200 V blocking and 10 A forward current at less than 10 V) that are reliable at high temperatures (300 C) and overcome many of the challenges with existing technologies. Diamond has a higher breakdown field than other existing semiconductor (wide bandgap) materials; thus, diamond devices offer the potential of higher blocking voltage. Technical objectives of this project include optimizing the workflow of material deposition, device design and device fabrication processes to achieve 1200 V blocking voltage by developing device designs that increase breakdown field by 2-4 times to enable broad translation of this technology. This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.