There is current interest in medical and scientific instrumentation that uses pulsed high frequency energy to excite various materials. The behavior and emissions from these materials in response to the energy pulses provide useful information about the material. Power sources are becoming available at the desired high frequencies of 90 GHz to 250 GHz, but the means to pulse this energy is lacking. The object is to show the feasibility of providing RF energy control using a semiconductor switch. It is postulated that such a switch can be made by fabricating an array of high speed diodes on a semiconductor substrate which is placed so as to control the flow of RF energy. The switch would be usable at a frequency of 140 GHz, switch at under 15 ns, and handle a peak power of 100 watts. The results of a successful program will enhance many times the sensitivity and resolution of pulsed resonance instruments.Commercial Applications:Success of the work would greatly enhance the sensitivity and resolution of medical and scientific instrumentation using pulsed high frequency energy in the 90 GHz to 250 GHz range. It would also be beneficial to radar, communication, and imaging systems.
