Amorphous silicon-carbide materials are proposed to be incorporated into electroluminescent thin-film devices. These materials, due to their non-conserved momentum transitions offer high luminescence efficiencies, and variable emission wavelengths, depending on the carbon content of a-Sil xCx:H. At least two deposition methods, rf glow discharge deposition and photo-CVD, are to be used to compare two types of electroluminescent structures, ac-driven insulator/a-Sil xCx:H/ insulator devices and forward-bias driven p-i-n light-emitting diodes. These deposition methods are suitable for both insulator and amorphous silicon-carbide layers, as well as for n and p-doped layers. Compared to conventional large-area thin-film electroluminescent de-vices, the preparation can thus be integrated into one technique, and hence significantly reduce cost.Commercial Applications:as described by the awardee: Research could lead to the development of liquid-crystal back-light-ing, alphanumeric displays, addressable monochrome and multicolor flat-panel displays for a rapidly growing market in commercial applications, ranging from automotive indicator displays, computer screens, to ultimately flat-panel color television.
