SBIR-STTR Award

Amplifier using N-polar T-gate gallium nitride High Electron Mobility transistor (ANTHEM)
Award last edited on: 1/3/2023

Sponsored Program
SBIR
Awarding Agency
DOD : Navy
Total Award Amount
$1,239,664
Award Phase
2
Solicitation Topic Code
N211-086
Principal Investigator
Toshifumi Nakatani

Company Information

MaXentric Technologies LLC

2071 Lemoine Avenue Suite 302
Fort Lee, NJ 07024
   (201) 242-9800
   info@maxentric.com
   www.maxentric.com
Location: Multiple
Congr. District: 05
County: Bergen

Phase I

Contract Number: N68335-21-C-0393
Start Date: 6/7/2021    Completed: 12/7/2021
Phase I year
2021
Phase I Amount
$239,700
To meet the demands of the A19-009 N-Polar Gallium Nitride High Electron Mobility Transistor in Low-Cost Process Technology for mm-wave Transceiver ApplicationAmplifier using N-s program, the MaXentric team proposes the ANTHEM (polar T-gate gallium nitride High Electron Mobility transistor), which provides E-band low noise amplifier (LNA) and transmit/receive (T/R) switch using a Nitrogen-polar (N-polar) Gallium Nitride (GaN) high-electron mobility transistor (HEMT) technology. The device will be fabricated on a low-cost Sapphire substrate that can be scaled to diameters of 150 mm and above. During Phase I, the team will characterize and model a N-polar GaN HEMT device, especially for the noise performance in a millimeter-wave frequency band. In addition, E-band LNA and T/R switch will be designed using extracted models, where the targeted gain and noise figure are >15 dB and

Benefit:
Many military wireless network systems operate in millimeter-wave bands for demand on higher data rate. Latest millimeter-wave transceiver systems tend to employ active electronically scanned array (AESA) architecture, where each antenna element is connected to a small solid-state transmit/receive (T/R) module under the control of a computer. The proposed solution satisfies the requirement with high sensitivity, low power consumption and low cost.

Keywords:
Sapphire, Sapphire, high-electron mobility transistor, noise figure, millimeter wave frequency, wireless communication., Low noise amplifier, Nitrogen-polar Gallium Nitride, transmit/receive switch

Phase II

Contract Number: N68335-22-C-0442
Start Date: 7/28/2022    Completed: 7/31/2024
Phase II year
2022
Phase II Amount
$999,964
To meet the demands of the N211-086 N-Polar Gallium Nitride High Electron Mobility Transistor in Low-Cost Process Technology for mm-wave Transceiver Applications program, the MaXentric team proposes the ANTHEM (Amplifier using N-polar T-gate gallium nitride High Electron Mobility transistor), which provides E-band low noise amplifier (LNA) and transmit/receive (T/R) switch using a Nitrogen-polar (N-polar) Gallium Nitride (GaN) high-electron mobility transistor (HEMT) technology. The device will be fabricated on a low-cost Sapphire substrate that can be scaled to diameters of 150 mm and above. During Phase I, the team characterized and modeled a N-polar GaN HEMT device, especially for the noise performance in a millimeter-wave frequency band. In addition, E-band LNA and T/R switch were designed using extracted models, where the targeted gain and noise figure are >15 dB and

Benefit:
Many military wireless network systems operate in millimeter-wave bands to address the demand on higher data rate. Latest millimeter-wave transceiver systems tend to employ active electronically scanned array (AESA) architecture, where each antenna element is connected to a small solid-state transmit/receive (T/R) module under the control of a computer. The proposed solution satisfies the requirement with high sensitivity, low power consumption and low cost. Developed technology will be suitable as a T/R component (including LNA, T/R switch and high power amplifier) for AESA application, such as 5G, SATCOM and point-to-point communication. The low noise performance of the front-end amplifier is a key technology for wireless link to extend communication distance and to use a smaller size array. MaXentric will implement the developed MMICs into our products being developed under DoD SBIR programs, in addition with providing them to our customers

Keywords:
Low noise amplifier, wireless communication, Nitrogen-polar Gallium Nitride, high-electron mobility transistor, noise figure, transmit/receive switch, Sapphire, millimeter wave frequency