The proposed objective of this proposal is to develop and demonstrate a robust, high-throughput laser bonding technique universally applicable to wafer-level joining of silicon with various other materials including silicon, polymers, glasses, ceramics and metals. This unique approach utilizes optical transparency of Si to mid-infrared laser light. Using our patented experimental technique and unique process knowledge in laser-matter interactions, optical energy can be deposited with overall low thermal impact on wafer, and featuring high spatial selectivity by ultra-precise tailoring of spatial and temporal laser characteristics. We will provide numerical models for linear and non-linear light interaction with semiconductors, and heat transfer in multi-layer wafer materials. Experimental studies will provide proof of concept for bonding of Si with Si and other material combinations.
Benefit: The technology developed in the proposed R&D effort will be applicable to a large number of current and future applications in the semiconductor device industry, including MEMS and IC areas. The technology can be relatively flexibly integrated with existing manufacturing lines. Both defense-centered and general-purpose commercial market applications will be enabled.
Keywords: mid-infrared lasers, mid-infrared lasers, low-temperature processing, wafer packaging, laser bonding
