High Power Vertical Gallium Nitride (GaN) Transistors on Native GaN Substrates for Power Switching Applications
Award last edited on: 11/12/2018

Sponsored Program
Awarding Agency
DOD : Navy
Total Award Amount
Award Phase
Solicitation Topic Code
Principal Investigator
Isik C Kizilyalli

Company Information

Avogy Inc

677 River Oaks Parkway
San Jose, CA 95134
   (408) 684-5200
Location: Single
Congr. District: 17
County: Santa Clara

Phase I

Contract Number: N00014-13-M-0034
Start Date: 12/11/2012    Completed: 8/23/2013
Phase I year
Phase I Amount
Avogy has a unique approach to producing vertical GaN-on-GaN power devices that have fundamental advantages over silicon, silicon carbide, and lateral GaN devices. With this SBIR funding, we will demonstrate the feasibility of a normally-off vertical GaN transistor with a blocking voltage over 5000V, a threshold voltage greater than 1V, and specific on-resistance less than 30 mohm-cm2.

3300V and 5000V vertical GaN-on-GaN power devices can serve the commercial wind power, smart-grid, ship-propulsion, and high-speed rail markets. These devices will also be well-suited for military and space applications.

Normally-off transistor, Normally-off transistor, GaN, vertical transistor, 5000V

Phase II

Contract Number: N00014-14-C-0087
Start Date: 8/20/2014    Completed: 2/20/2016
Phase II year
Phase II Amount
In this abstract the development of vertical power transistors utilizing bulk GaN substrates with breakdown voltages of 5000V or higher, normally-off operation, and a drain current rating of 1A is proposed. These devices will feature vertical current flow, a threshold voltage of >2V, minimal to no dynamic on-resistance (such that Rac/Roc 50%. This Phase II proposal is a continuation of the work done in the Phase I effort.

GaN devices fabricated on bulk GaN substrates have very low specific on-resistance compared to the similar breakdown voltage rated devices made on Silicon or SiC. As a result small device sizes are possible with bulk GaN which produce very small device capacitances. This allows power electronics applications to operate at much higher switching frequencies than applications using Si or SiC devices. Additionally the vertical nature of the devices allows for arbitrarily thick epi layers that translate to high breakdown voltage devices exceeding 5000V. The low defect density of bulk GaN substrates leads to high yielding, high reliability devices that can operate at very high temperatures. All of these factors combined lead to a reduced system size and cost, increased system reliability, reduced use of rare-earth metals and reduced cooling needs in high power applications. Potential applications are high efficiency, extremely high power density solar inverters and wind power converters, traction motor drives for hybrid vehicles, ship propulsion, solid-state transformers for grid connectivity, high temperature and reliability down-hole applications, etc,

High-yielding, transistors, reliable, Power, vertical, Density , normally-off, GaN, defects