SBIR-STTR Award

High Efficiency 808-nm VCSEL Arrays with Excellent Beam Quality
Award last edited on: 4/23/2013

Sponsored Program
SBIR
Awarding Agency
DOD : Navy
Total Award Amount
$79,938
Award Phase
1
Solicitation Topic Code
N122-112
Principal Investigator
Zhigang Chen

Company Information

nLIGHT Inc (AKA: nLight Photonics Corporation~nLight Corp~nLight Corporation)

4637 Nw 18th Avenue
Camas, WA 98607
   (360) 566-4460
   sales@nlight.net
   www.nlight.net
Location: Multiple
Congr. District: 03
County: Clark

Phase I

Contract Number: N68335-13-C-0077
Start Date: 11/2/2012    Completed: 4/28/2013
Phase I year
2013
Phase I Amount
$79,938
Today’s high energy Q-switched Nd:YAG lasers are often pumped by stacks of multiple edge-emitting diode laser bars since the vertical-cavity surface-emitting laser (VCSEL) traditionally have been lower in efficiency. In this effort we are proposing a novel VCSEL design which overcomes the efficiency bottleneck in conventional VCSEL while preserving its beneficial attributes such as uniform beam in the far-field, higher brightness, narrow spectral width, less sensitivity to thermal drift in center wavelength and lower cost of manufacturing. Under the proposed program, nLight will develop and demonstrate a high power, high efficiency and high beam quality VCSEL array near 808 nm, with efficiency compared to the state-of-the-art edge-emitting diode laser bars. nLight will achieve this by leveraging its industry-leading high efficiency 808-nm epitaxy design, and incorporating a cascaded bipolar VCSEL design. The end goal of the program is to achieve > 60% wallplug efficiency and >1 kW QCW optical power in a 0.5 cm2 high power VCSEL array, with a spectral width less than 1 nm and a temperature coefficient of lower than 0.1 nm/°C.

Keywords:
Bipolar Cascade, Bipolar Cascade, Laser Diode, High Power, Vcsel, High Efficiency

Phase II

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Start Date: 00/00/00    Completed: 00/00/00
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