SBIR-STTR Award

Shipboard Low Noise Amplifier Assembly
Award last edited on: 10/16/2018

Sponsored Program
SBIR
Awarding Agency
DOD : Navy
Total Award Amount
$1,118,950
Award Phase
2
Solicitation Topic Code
N07-194
Principal Investigator
Mark Royer

Company Information

Auriga Microwave (AKA: Auriga Measurement Systems LLC)

Two Executive Drive Suite 305
Chelmsford, MA 01824
   (978) 452-7700
   info@aurigamicrowave.com
   www.aurigamicrowave.com
Location: Single
Congr. District: 03
County: Middlesex

Phase I

Contract Number: N66001-08-M-1064
Start Date: 5/30/2008    Completed: 3/30/2009
Phase I year
2008
Phase I Amount
$99,899
Auriga Measurement Systems and M/A-COM team up in this program to address the issue of mast-mounted shipboard low noise amplifier assemblies, which are required to have not only rigorous electrical performance but also to withstand severe weather and corrosive environments. The assembly being created in this work will contain a high power self-protective non-reflective limiter, a high linearity LNA and a low-noise bypass switch. To provide reliable, operator-free performance this assembly will feature built-in-test (BIT) and repair capability. In the event of a failure, the assembly will be capable of detecting the problem, notifying the operator, and automatically repairing the problem for seamless operation. Most of the components will be integrated onto a single MMIC. The end result will be a low-cost, compact assembly capable of state-of-the-art LNA performance. The small size will allow for easy integration onto existing and future mast top assemblies. In Phase I, a detailed design analysis will be performed and a layout will be generated. In Phase I Option, a prototype assembly will be built using commercial components and tested. In Phase II, the MMIC designed in Phase I will be fabricated, hermetically packaged, thoroughly tested, and prepared for commercial and military applications.

Keywords:
Mmic, Built-In-Test (Bit), Lna, Limiter, Non-Reflective, High Linearity, Broadband, High Power, Low-Noise, Self-Protective, Fet, Phemt, Spdt/Sp3t Switch, Hermetic Package

Phase II

Contract Number: N66001-10-C-0130
Start Date: 2/23/2010    Completed: 8/23/2011
Phase II year
2010
(last award dollars: 2013)
Phase II Amount
$1,019,051

Auriga will produce a mast-mounted LNA that could withstand the high input power environment by utilizing a transistor typically found in power amplifiers; this transistor would also provide low noise characteristics. This novel approach was proposed and validated in Phase I. The enabling technology is Gallium Nitride (GaN), which is a relatively new technology. The high power handling capability of GaN is well-known, but the low noise characteristics have only recently been investigated. Studies have shown comparable noise performance between GaN and GaAs technologies.

Keywords:
Module, Module, Packaged., High Electron Mobility Transistor, High Linearity, Mast-Top Receiver, Low Noise Amplifier, Gallium Nitride, Non-Reflective