MAMOT proposes to develop an electronic memory architecture capable of DRAM densities and SRAM speed. Each bit will be composed of a single nonlinear device, the Tunnel Switch Diode (TSD), which can retain binary information in the form of a stabel high or low current state. The main goals of the Phase I effort will be to eplore the possible operating parameters of the discrete TSD device, to investigate the possible radiation hardness of the device and to construct a working 16 bit demonstration unit.
