We propose to develop high-temperature mid-infixed. (3-5 gm) laser diodes with a high repetition frequency > 50 KHz in pulsed mode or high output power in cw mode. Recently, we have demonstrated optically pumped 285 K IIIN Type-H Quanturn-Well lasers at 4.1 Jim with the maximum peak output power of 650 mW/facet at 81 K and 200 mWffacet at 170 K. Our proposed lasers are based on nearly lattice-matched InAsAnGaSbAnAs/AlSb type-11 heterostructures, and utilize spadally-indirect interband transitions. Since the Auger non-radiative recombinations are dramatically suppressed, the radiative efficiency will be at least 2 orders of magnitudes larger than the quantum cascade lasers demonstrated by AT&T group, H-VI lasers, and IV-VI lasers. 'Me Phase I effort will be directed towards the demonstration of nearly room-temperature high-power optically-pumped lasers in cw mode or with high repetition frequency in pulsed mode.
Keywords: Laser Diodes Type Ii Heterostructures Interband Transition Mid-Infrared Inas/Algasb Quantum Wells
