SBIR-STTR Award

High-Power Mid-Infrared Lasers Based on III-V Type-II Quantum Wells
Profile last edited on: 5/16/02

Program
SBIR
Agency
Navy
Total Award Amount
$69,485
Award Phase
1
Principal Investigator
Chih-Hsiang Lin
Activity Indicator

Company Information

QET Inc

5319 Dumfries
Houston, TX 77096
   (713) 743-3631
   N/A
   N/A
Multiple Locations:   
Congressional District:   07
County:   Harris

Phase I

Phase I year
1996
Phase I Amount
$69,485
We propose to develop high-temperature mid-infixed. (3-5 gm) laser diodes with a high repetition frequency > 50 KHz in pulsed mode or high output power in cw mode. Recently, we have demonstrated optically pumped 285 K IIIN Type-H Quanturn-Well lasers at 4.1 Jim with the maximum peak output power of 650 mW/facet at 81 K and 200 mWffacet at 170 K. Our proposed lasers are based on nearly lattice-matched InAsAnGaSbAnAs/AlSb type-11 heterostructures, and utilize spadally-indirect interband transitions. Since the Auger non-radiative recombinations are dramatically suppressed, the radiative efficiency will be at least 2 orders of magnitudes larger than the quantum cascade lasers demonstrated by AT&T group, H-VI lasers, and IV-VI lasers. 'Me Phase I effort will be directed towards the demonstration of nearly room-temperature high-power optically-pumped lasers in cw mode or with high repetition frequency in pulsed mode.

Keywords:
Laser Diodes Type Ii Heterostructures Interband Transition Mid-Infrared Inas/Algasb Quantum Wells

Phase II

Phase II year
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Phase II Amount
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