Silicon carbide has the potential to permit superior power and switching devices due to its unique material properties. Applications include high frequency power devices for portable communications and radar devices for power generation and control at moderate frequencies. The total market for power devices is expected to grow in excess of $4B by the end of the century. We anticipate that silicon carbide devices can penetrate greater than 10% of the market.
Benefit: Rare-earth-doped nanocrystallin insulators developed as efficient blue, green and red phosphors will be tested for various display applications such as HDTV, field emission, plasma and electroluminescent displays. T he ultrafast speed achieved in these doped nanocrystals could yield comp act optical-and electron-beam-bumped lasers from UV to IR range.
Keywords: ultrafast phosphors, ultrafast phosphors, ultrafas sensors, doped nanocrystals, quantum dot phosphors, rare-earth doped quantum dots
