SBIR-STTR Award

Roller Bearing Inspection System
Award last edited on: 9/5/2002

Sponsored Program
SBIR
Awarding Agency
DOD : Navy
Total Award Amount
$54,713
Award Phase
1
Solicitation Topic Code
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Principal Investigator
Douglas C Echert

Company Information

Flow International Corporation (AKA: Flow International Corporation~Flow Research Inc~Quest Integrated~Flow Industrie~Photon sciences)

23500 - 64th Avenue South
Kent, WA 98032
   (253) 850-3500
   info@flowcorp.com
   www.flowwaterjet.com/
Location: Single
Congr. District: 09
County: King

Phase I

Contract Number: ----------
Start Date: 00/00/00    Completed: 00/00/00
Phase I year
1989
Phase I Amount
$54,713
Phase I objectives are to develop the conceptual design of a roller bearing measurement system and todemonstrate its feasibility.then, appropriate measuring techniques for the various parameters will be identified. Candidate measuring techniques will include heterodyne interferometers, eddy current sensors, optical triangulation sensors, moire deflectometry, and laser micrometers. The critical tech nologies that are part of the conceptual design will be mocked up and tested and then demonstrated to the Navy. Technologies selected will depend upon the Navy's gauging requirements and the specific small business innovation research (SBIR) program -Phase I the objective of the program is to synthesize a large-area, thin-film of monocrystalline tic which is suitable as substrate for the heteroepitaxial growth of beta-sic. Monocrystalline tic can be grown by chemical vapor deposition on a lattice-matched substrate. Diamond materials institute inc (dmi) plans to achieve this goal in two phases. In Phase I, dmi plans to demonstrate a novel, step process for heteroepitaxial growth of tic by cvd. The substrate will be a free-standing b-sic single crystal heteroepitaxially grown on si. Dmi proposes a novel process to getter crystalline defects from the b-sic surface before tic deposition. Removal of crystalline defects from the surface of the b-sic substrate should prevent nucleation of defects in the tic. Phase II will scale-up the process to create defect-free, tic monocrystals at least I00 mm in diameter. Phase II will include heteroepitaxial growth of semiconductor-grade b-sic on the monocrystalline tic and the fabrication of semiconductor devices in the b-sic.

Phase II

Contract Number: ----------
Start Date: 00/00/00    Completed: 00/00/00
Phase II year
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Phase II Amount
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