Spire Semiconductor proposes to make an InGaAs-based three-junction (3J) tandem thermophotovoltaic (TPV) cell to utilize more of the blackbody spectrum (from a GPHS) efficiently. Semi-insulating InP wafers will be used for monolithically integrated module (MIM)compatibility and to achieve low free-carrier absorption. In Phase 1, we will design, epitaxially grow, and process large area single junction test cells for each of the three bandgaps proposed (to evaluate material quality), as well as for a full tandem cell structure. In Phase 2, we would further refine the structure and incorporate the material into MIM modules.
