The outstanding materials properties of wide bandgap semiconductor materials, and of gallium nitride (GaN) in particular, provide great promise to enable highly efficient power electronics devices, high radiation hardness devices, and electronics systems which are able to operate at high temperatures. Kyma Technologies will build on previous experience in HVPE nitride growth to develop high growth rate, high quality, low cost, thick boule growth of gallium nitride crystals, from which multiple bulk GaN wafers can be sliced and processed. Approved for Public Release | 22-MDA-11215 (27 Jul 22)
