We propose the development of grating coupled surface emitting lasers (GCSELs) based on the GaSb material system. These lasers will operate in the continuous wave mode at temperatures well above room temperature and will offer higher power and efficiency as compared to any current technology. The use of GaSb based materials will insure good thermal stability, high efficiency, and high operating temperatures. These properties are a direct consequence of the effective carrier confinement for both electrons and holes available in this material system. These semiconductor materials developed in Phase I can be used in VICSELs, VECSELs, or GCSELs. Broad area multimode lasers and single spatial mode ridge lasers will be demonstrated in Phase I. We propose developing GCSELs based on these materials with high fill factor in a Phase II effort.
Keywords: Semiconductor Laser, Diode Laser, Laser Illuminator, Surface Emitting Laser, Laser Array, High Power Laser, Ir Laser, Ir Countermeasures
