SBIR-STTR Award

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Cost Effective Large Size Semi-Insulating Silicon Carbide (SiC) Ingots For Ballistic Missile Radar and RF Products
Award last edited on: 2/21/2007

Sponsored Program
SBIR
Awarding Agency
DOD : MDA
Total Award Amount
$99,899
Award Phase
1
Solicitation Topic Code
MDA04-111
Principal Investigator
Yuri Khlebnikov

Company Information

INTRINSIC Semiconductor Corporation

22660 Executive Drive Suite 101
Sterling, VA 20166
   (703) 437-4000
   sales@intrinsicsemi.com
   www.intrinsicsemi.com
Location: Single
Congr. District: 10
County: Loudoun

Phase I

Contract Number: ----------
Start Date: ----    Completed: ----
Phase I year
2005
Phase I Amount
$99,899
In this proposal, INTRINSIC Semiconductor proposes unique and innovative semi-insulating (SI) SiC substrate process technologies that will impact next generation GaN and SiC device development, leading to innovative radar and RF discreet and monolithic microwave integrated circuit (MMIC) products. The technical objectives and the approaches to be pursued in this Phase I program are targeted for SI SiC manufacturing cost reduction via increased boule length (>30 mm) and bulk growth rate (> 1mm/hr)

Phase II

Contract Number: ----------
Start Date: ----    Completed: ----
Phase II year
----
Phase II Amount
----