In this proposal, INTRINSIC proposes unique and innovative technologies that will impact next generation epitaxy and device development, leading to innovative radar and RF products. Specifically, based on the successful proof of concept results obtained under the Phase I effort for developing 4-inch diameter high-purity semi-insulating (SI) SiC substrates, INTRINSIC welcomes the opportunity to extend its efforts in to a Phase II program. The Company firmly believes that under a Phase II project a commercially viable and cost effective wafer manufacturing process can be established serving the near term RF and Radar application needs of the Missile Defense Agency. Currently, via its proprietary techniques and recipes, INTRINSIC is successfully producing high quality 2-inch and 3-inch diameter SI SiC substrates. In the frame of this proposed project, the Company intends to apply its expertise and knowledge to 4-inch diameter SiC substrate production. Increasing the wafer diameter is a process innovation needed to lower the manufacturing cost of high-frequency devices for innovative military radar and RF applications. INTRINSICs customers include (but not limited to) companies such as Raytheon (support letter included in the Phase-I proposal), GE, HRL, and Northrop Grumman.
Keywords: Silicon Carbide, Sic, Single Crystal Growth, Wafer, Semi-Insulating, High Purity, 4-Inch Diameter Sic Wafer
