The goal of this project is to use two innovative technologies to fabricate multi-color VLWIR HgCdTe FPAs for MDA's applications. In this program, the state-of-the-art ion implantation and double layer epitaxy techniques will be used for producing the VLWIR detectors and arrays. In Phase I, two types of devices will be fabricated and delivered to validate the technologies. The first is to fabricate and deliver discrete VLWIR HgCdTe diodes with a minimum wavelength of 17 mm and a target wavelength longer than 20 mm operating at 77K and/or 40K-60K. The second is to produce and deliver a 160x128, MWIR/LWIR (or MWIR/VLWIR) two-color HgCdTe FPA using a 320x256 readout circuit. In Phase II, the four-color HgCdTe VLWIR FPA technology will be fully developed. MWIR-MWIR-LWIR-VLWIR four-color HgCdTe FPAs using 640x512 readout circuits will be produced and delivered to the MDA for evaluation. In the meantime, relationships with US defense prime contractors will be established for marketing the FPAs.
