Co-Located Dual Band (VLWIR1/VLWIR2) Focal Plane Arrays for Space Applications
Award last edited on: 1/25/2007

Sponsored Program
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Principal Investigator
Peter J Kannam

Company Information

Advanced Device Technology Inc

4 Raymond Avenue Suite 5
Salem, NH 03079
   (603) 894-1402
Location: Single
Congr. District: 02
County: Rockingham

Phase I

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We propose to develop Co-Located Dual Band (VLWIR1/VLWIR2) Focal Plane Arrays on Strained Layer Superlattices (SLS) Material. We propose innovative Al(x)Ga(1-x)As/InAs SLS layers to produce detectors for very long wavelength (22 um). The key features are: 1) SLS Material Growth by Migration Enhanced Epitaxy (MEE) Technique. Type II SLS layers are grown with Migration Enhanced Epitaxy Technique by using a Molecular Beam Epitaxial (MBE) reactor. 2) SLS Structures for VLWIR Waveband. Detailed analysis is conducted by using 8-band k.p. model to design SLS structures for Very-Long Wavelength (22um) detection. 3) Co-Located Dual Band (VLWIR1/VLWIR2) SLS Structures. Co-Located SLS Structures are grown for VLWIR1 (10-16um) and VLWIR2 (16-22um) waveband ranges with Al(x)Ga(1-x)As/InAs SLS layers. 4) Simultaneous Detection of Dual Band Signals. The readout circuitry and the interconnect scheme are designed to detect the two waveband signals in a simultaneous fashion during each frame. 5) Cross Talk Elimination. The design of the 2-color structure is such that the cross talk among the wave bands and also among the pixels are eliminated. High Performance Al(x)Ga(1-x) As/InAs dectors were already fabricated and tested for SWIR(1-3um) waveband. The results showed: Detectivity (cm-Hz(1/2)/W)=1.3E12 at 77K, 1.4E11 at 250K, 2E10 at 300K, and quantum efficiency (n) = 72% During Phase 1, the growth of Al(x)Ga(1-x)Sb/InAs SLS structures will be optimized and wafers will be grown of VLWIR1 (10-16um) and VLWIR2 (16-22um) wavebands. Also during Phase 1, p-i-n diode structures will be grown and single element detector fabrication will be initiated. During Phase 2, 4x4 element Co-Located Dual Band Detector Arrays will be fabricated and tested. Also during Phase 2, the fabrication of 320 x 256 element VLWIR focal Plane Arrays will be initiated. During Phase 3, IR Camera will be designed and built with VLWIR focal plane arrays to operate at 77K temperature levels.

Phase II

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