Materials Research Group, Inc. (MRG) proposes the process development of low-temperature fabrication processes for thin film silicon carbide (SiC) infrared (IR) emitter on flexible substrates for thermophotovoltaic (TPV) applications. Optimizing the emitter is critical to an effective TPV system. The outstanding thermal and chemical stability of SiC enable it to operate at high temperatures up to 1500¡C. To date, the development of SiC films has concentrated on its use as a semiconducting material for high-temperature and high-power applications. However, development of SiC for IR heat radiators, is certain to attract attention for a wide variety of applications, especially in TPV. As an alternative to bulk SiC emitter, MRG proposes this novel low-temperature, low-cost and flexible process for deposition of SiC thin layers using plasma enhanced chemical vapor deposition (PECVD). PECVD has the advantage of much lower substrate temperatures (200¡C) than thermal CVD processes, where the temperature is typically 1350¡C for SiC growth. Flexible substrates will be used to aid the development of lighter weight, less costly TPV emitters, allowing TPV power to become thoroughly integrated into aerospace applications, domestic power grids, and mobile consumer electronics. Thin film SiC emitter has great potential to provide low-cost, high operational temperature, lightweight, flexible, durable emitters for a wide variety of space, military, municipal and consumer TPV applications, including transportation, co-generation portable power generation and remote electricity supplies.
Keywords: Thermophotovoltaic, Infrared Emitter, Silicon Carbide
