A new material has been invented that has unique and outstanding properties for magnetic, electro-optical and magneto-optical applications. The material is a ferromagneVsemiconductor thin film composite whose growth is compatible with integration in gallium arsenide devices. It offers the potential for new functions and new or improved devices integrating magnetic, electro- and magneto-optic and electronic functions. Our name for devices employing these properties is magfet. Already we have obtained an effective Pockels constant 100 times larger than that of lithium niobate and an electro-optic figure of merit (Pockels constant times index cubed) 1000 times larger. In this project optimization of the magnetic and optic magfet properties will be carried out. High quality, ultrathin films will be grown on GaAs substrates by molecular beam epitaxy. The dependence of magfet properties on thickness and growth parameters will be determined. Its many novel unique properties make this material highly attractive for magnetic and electro-magneto-optic applications with great commercial potential. This project will significantly further the development of such magfet devices. Thin epitaxial films of MnAs on GaAs have unique properties that could be the bases for improved or novel electro-optic and magneto-electro-optic devices. Compatibility with device integration and mass production and large changes in index of refraction and magneto-optic Kerr effect produced by readily available electric fields are all highly attractive attributes.
Keywords: Semiconductor, Pockels Constant, Sensor, Kerr Effect, Optoelectronics, Magnetooptcs, Magnetoelectron
