Phosphides are growing in importance in the area of semiconductor, photo-voltaic, solar energy, microwave and optoelectronic devices. Indium phosphide is a well known semiconductor with application as a laser diode in fiberoptic communication and as a substrate for MMIC and MAFET devices for ultrahigh speed communication, computing and integrated electro-optics. InP also displays the photorefractive effect which can be utilized for infrared optical signal processing. For solar power applications, III-V's have a potential for over 30% efficiency. Parke Mathematical Laboratories, Inc. proposes to develop a novel method for high pressure synthesis of metal phosphides that has the potential to reduce the cost of III-V and II-IV-V2 materials by combining direct synthesis from highly purified elements with crystal growth from the melt executed in contiguous steps without opening the furnace. The proposed method, in contrast to in-situ techniques currently under development, will be more easily controlled, exhibit greater reproducibility, yield stoichiometric melts necessary for successful crystal growth, readily scaled, and will be much less subject to catastrophic failure. Successful development and implementation of the proposed concepts will result in a process that will eliminate the complex, multi-step feed synthesis method that is the current industry standard. Reduced manufacturing costs should be reflected in a lower product cost and wider utilization of single crystal phosphide materials.
Keywords: Single Crystal Electro-Optics Substrates Microwave (Mafet) Iii-V Compounds Inp Mmic Gap
