SBIR-STTR Award

Gallium nitride (GaN) is a wide band gap semiconducter which holds promise for building a wide range of devices such as UV lasers, blue LEDs, UV detectors, non-volatile memories, high temperature electronics and high frequency-high speed devices and integrated circuits. At the present time, GaN films which are produced by the most widely used folm growth technologies, have residual hydrogen which leads to high donor levels. This leads to degradation of the electrical properties and prevents attainment of high mobility n-type or p-type films. Hydrogen free films of superior electrical properties can be grown by MBE, but the growth rates are slow and the method is expensive. The purpose of the proposed program is to provide a low cost method for obtaining large area, single crystal films of GaN which are free of hydrogen and which would have superior electrical properties and device performance.

At the present time, GaN films have residual hydrogen. Hydrogen free films of superior electrical properties can be grown by MBE, but the growth rates are slow, the process is expensive and the capital equipment is very expensive. Phase I demonstrated the viability of producing hydrogen free single crystal GaN films. The process can operate at 200 to 300 degrees Celsius lower temperature than the CVD or MOCVD systems. Phase II proposes to scale up the process to enable growth of large area, high quality GaN with controlled electrical and optical properties. This process is expected to provide a low cost method for obtaining large area, single crystal films of GaN which are free of hydrogen and which would have superior electrical properties and device performance. Availability of hydrogen free GaN films in R&D and productions quantities for development and production of LEDs, lasers, detectors, non-volatile memories, high temperature devices and high frequency-high speed devices and ICs.