The molecular-beam-epitaxial growth of semiconductors allows the engineering of new materials with tailored electronic properties. We propose to fabricate a multiple quantum well material that has been designed to demonstrate desirable nonlinear properties for mixing the mid-infrared and terahertz spectral regions. The material will be fabricated by molecular-beam epitaxial growth in the aluminum gallium arsenide semiconductor system. To characterize the material we will use an infrared spectrometer to perform linear oaborption measurements. These measurements will be analyzed to provide optical parameters necessary for calculating the nonlinear mixing efficiency of the mid-infrared and terahertz frequencies. This will demonstrate the ability to produce materials that have desirable nonlinear properties.
Keywords: ALGAAS MULTIPLE QUANTUM WELL MATERIAL TERAHERTZ OPTICAL
