This program will develop a method of growing bulk ternary compound semiconductors of uniform composition. The target material of In(1-x)Ga(x)As was chosen because of its immediate use in the growth and fabrication of very high speed HEMT devices. The method should be applicable to other ternary compounds, giving a new field of "substrate engineering" to complement the "bandgap engineering" at present applied by epitaxy. The availability of substrates lattice matched to active layers will reduce strain and improve performance in devices such as II-VI lasers, solar cells, and HBTs.
Keywords: Bulk Ternary Compound Semiconductors Uniform High-Speed Hemt Substrate Bandgap Epitaxy
