SBIR-STTR Award

Fault-tolerant intelligent static random access memory
Award last edited on: 9/11/02

Sponsored Program
SBIR
Awarding Agency
DOD : MDA
Total Award Amount
$49,889
Award Phase
1
Solicitation Topic Code
BMDO90-008
Principal Investigator
Tegze P Haraszti

Company Information

Microcirc Associates

102 Scholz Plaza N Suite 238
Newport Beach, CA 92663
   (949) 548-5214
   claudefed@sbcglobal.net
   N/A
Location: Single
Congr. District: 48
County: Orange

Phase I

Contract Number: 40816
Start Date: 00/00/00    Completed: 00/00/00
Phase I year
1990
Phase I Amount
$49,889
This project will develop static random access memories (scrams) that are intelligent and tolerant of faults. These intelligent circiuts will correct both hard and soft types of errors. Circuit elements with hard errors will be replaced by redundant elements, while soft errors will be corrected by error checking and correcting circuits. The circuit can also do bookeeping for faulty and occupied locations. It can self-test, self-repair, and has security keyed access to inhibit unauthorized use. The circuit is laser programmed to optimize yield. The srams can withstand nuclear radiation and the impact of cosmic particles. The circuits are packed to high density, operate at high speed, and are reliable. They dissipate very little power and can be manufactured at low cost. The design is maintenance-free with a long lifetime, suitable for space or aircraft conditions, such as in robots, teleoperators, and controls in nuclear plants. It can be manufactured into ultra-high and integrated circuits. The design could increase the storage capacity, while reducing the size and weight of computers, processors, and other electronic equipment.

Phase II

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Start Date: 00/00/00    Completed: 00/00/00
Phase II year
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