The objective of this program is to design, build, and test pseudomorphic InP high electron mobility transistors (HEMTs). This work is an extension of current efforts to develop pseudomorphic HEMTs Oon GaAs. Building upon existing analytical fabricational expertise, the goal is to demonstrate working, ultra-high performance, pseudomorphic HEMTs with gate length of 80 nanometers (800 angstroms). Also, by using suitable microwave and millimeterwave techniques the devices' f-will be measured. Anticipated benefits of pseudomorphic (GAaS) HEMTs include lower noise, high dynamic range, and wider bandwidth. Successful development of such a device could yield practical millimeter-wave radar's and imaging systems, smaller, lighter weight microwave and millimeter-wave systems as well as improved satellite communications and remote sensing systems.
