The objective of this work is to demonstrate GaN-based Junction Barrier Schottky (JBS) diodes using a novel ion implantation process developed in previously ARPA-E funded projects. The centerpiece of our proposed technology is selective area doping via implantation of Mg ions, which leverages our achievements in the ARPA-E PNDIODES program to push into commercial devices. The targeted application of these JBS diodes is for adjustable speed drive (ASD) motor systems and the developed devices will replace Si and SiC based diodes. With respect to existing silicon diode-based systems, the energy loss in the diode front end rectifier system could be reduced by about 50%. This will drastically reduce losses in ASD motor systems compared to existing high-power diodes and, as such, directly address the ARPA-E mission goals.
