The objective of this work is to develop AlN-based Schottky diodes with electrical properties that will drastically reduce forward conduction losses compared to existing high-power diodes. This objective is achieved through ion implantation of Si in AlN, which provides a shallow ntype dopant in the n+ contact layers. Sophisticated point defect control processes are implemented for the controlled, low doping concentrations necessary for the n-drift layer. By demonstrating the proposed AlN Schottky barrier diodes with next generation electrical properties, we will establish that this material is indeed the candidate for next generation high power diodes. This will directly fortify the position of the United States in this important technological field and therefore directly address one of ARPA-E mission statements. Over the long term, the proposed work will lead to a widespread adoption of AlN-based high power diodes. Since such diodes can greatly reduce forward losses, compared to incumbent technology, this will directly address the ARPA-E missions to improve energy efficiency and reduce energy consumption.
