Wide bandgap materials, such as silicon carbide, have been touted as a significant improvement over silicon for high power applications in high energy physics research, because of higher breakdown voltage, lower specific resistance, and higher temperature operation. Until recently, silicon carbide research has been focused on the materials science aspects, such as wafer defects, potential yields, etc. Now, silicon carbide switching devices are beginning to become reality. This project will develop a new pulse power switch based upon silicon carbide switching devices in a series configuration. The switch will afford a means of easy series connection to allow higher voltage operation to meet the requirements for klystron modulators. In Phase I, a small scale silicon carbide switch will be designed and built. The switch will be demonstrated and used to experimentally validate simulations. The results of Phase I will provide objective evidence that the development of a full scale switch is warranted for Phase II.
Commercial Applications and Other Benefits as described by the awardee: The new silicon carbide switch should result in a lower cost, higher performance alternative to traditional silicon based switches for klystron modulators. Spin-off benefits could accrue in high power radars that use high power vacuum electronic amplifiers and oscillators. Also, this research could benefit utility industries utilizing high voltage DC transmission
