SBIR-STTR Award

Novel Low Cost Processes for Production of Crystalline Silicon Wafers for Photovoltaic Industry
Award last edited on: 11/9/2006

Sponsored Program
SBIR
Awarding Agency
DOE
Total Award Amount
$800,000
Award Phase
2
Solicitation Topic Code
28 a
Principal Investigator
P Santhana Raghavan

Company Information

GT Advanced Technologies Inc (AKA: GTAT Corp~Ferrofluidics Corporation~GT Equipment Technologies Inc~GT Solar International)

243 Daniel Webster Highway
Merrimack, NH 03054
   (603) 883-5200
   info@gtat.com
   www.gtat.com
Location: Multiple
Congr. District: 01
County: Hillsborough

Phase I

Contract Number: ----------
Start Date: ----    Completed: ----
Phase I year
2005
Phase I Amount
$100,000
"Clean energy" is attracting more and more interest, which in turn exerts cost pressure on photovoltaic (PV) manufacturers for more efficient solar panel production. This project will develop a cost-effective technology to produce PV-grade silicon wafers. In particular, a reuseable crucible will be developed for the production of high purity, low oxygen content crystalline silicon ingots. The approach will be based on a therma-expansion-coefficient-matched graphite crucible and a high purity, multilayered release coating. Phase I will utilize the reusable crucible to design a rapid single-crystal growth technique for photocoltaic grade silicon.

Commercial Applications and Other Benefits as described by the awardee:
The technology should produce crystalline silicon with less oxygen and residual impurity, low dislocation density, and uniform electrical and mechanical properties, leading to increased overall cell efficiency at low cost

Phase II

Contract Number: ----------
Start Date: ----    Completed: ----
Phase II year
2006
Phase II Amount
$700,000
"Clean energy" is attracting more and more interest, which in turn exerts cost pressure on photovoltaic (PV) manufacturers for more efficient solar panel production. This project will develop a cost-effective technology to produce PV-grade silicon wafers. In Phase I, a non-oxide-based reuseable crucible was developed for the production of high purity, low oxygen content crystalline silicon ingots. The approach was based on a reusable thermal-expansion-coefficient-matched graphite crucible and a high purity, multilayered release coating. The crucible was used to develop a rapid, single-crystal growth technique for photovoltaic-grade silicon. Silicon ingots grown with this technique resulted in better yield and higher throughput. Phase II will: (1) scale-up the reusable crucible to grow 270 kg ingots, using a state-of-the-art directional solidification system; (2) optimize the rapid crystal growth process using the reusable crucible; and (3) develop a high-throughput, continuous, in-line, silicon brick casting system using the reusable crucible.

Commercial Applications and Other Benefits as described by the awardee:
The new silicon wafer production technique should reduce the cost of solar wafers, which is the bottleneck for the healthy growth of the photovoltaic industry. The new technology should have significant advantages over existing techniques - reduced energy costs, much lower cost of solar wafers, higher cell efficiency