This project will investigate a new class of Host materials, the Group III metal nitrides, for application as the lighting emitting layer in thin film electroluminescence flat-panel displays. The project is aimed at improving the luminance of the blue in emission in full-color electroluminescent displays. Insulating gallium nitride, aluminum gallium nitrides and aluminate indium nitrite films will be deposited by metal organic chemical vapor deposition. The deposition process will employ novel Group III precursor compounds to grow the nitride films at temperatures compatible with commercial display glass substrates. Dopant ions will be introduced into the nitrite layers by ion implementation and evaluated to centers for blue electroluminescence. Rapid thermal annealing will be employed to redistribute the dopant ions in the nitride layer. The chemical composition, microstructure, and dopant profiles of the nitride players will be characterized by using thin-film analytical techniques. Thin-film electroluminescent devices employing the doped nitride layers will be prepared and characterized for spectral response, luminance and efficiency.
Anticipated results/
Potential Commercial Applications: It is anticipated that this project will result in new blue-emitting electroluminescent phosphor films at temperatures less than 600°C which could lead to U.S. manufacture of commercial full-color flat-panel displays.
