Morphous silicon (a-si) thin film particle detector, as an emerging particle detection device, with excellent radiation hardness and lower production cost than crystalline silicon (c-si), has attracted more attention and is under active development with promising performance improvements. Developing thin film transistors (tft) which can be fabricated on the same substrate of a-si thin film particle detectors would provide significant advantages for large scale applications such as for the Superconducting Super Collider. Based on our experience with a-si particle detectors and a-si tft development, an initial study for exploring the technical feasibility of developing a-si and poly-crystalline si (poly-si) tfts for a-si particle detection devices is proposed. The technical feasibility, potentials, and limitations of using a-si and poly-si tft technology to meet the needs of a-si particle detectors will be explored through material and device design, fabrication, optimization, and testing. In this study, high temperature annealing and laser annealing will be explored for transformation of a-si into high quality poly-si for reaching much higher electron and hole mobilities which are essential for high speed tft devices.
