We propose to develop tunable microwave frequency scanning tunneling microscopy and spectroscopy for 2-D and 3-D dopant profiling of semiconductors. For Phase 1, we will use existing state-of-the-art instrumentation at Penn State. We will have access to a wide range of semiconductor samples which will undergo complementary analyses using the current standard technologies. We will be partnering with a leading analytical services company for this purpose. Our tunable microwave frequency scanning tunneling microscopes are extremely versatile in terms of measuring linear and nonlinear, scalar and vector, and transmitted and reflected signals over a wide range of biases and frequencies (0-20 GHz). In Phase 1, we will measure tunneling impedance as a function of frequency and bias. We will determine which measurements are information-rich in terms of dopant profiling. In subsequent work, we will make these measurements quantitative. Through partnerships, we have ready access to samples, markets, and future technologies as they are being developed. COMMERCIAL APPLICATIONS: Nanometer-scale analyses for the electronics, communications, and biotechnology industries. The commercial applications of this work will be developed simultaneously through ongoing partnerships
