NIST has been using our 100% internal carrier collection efficiency silicon photodiodes with 60 oxynitride front window as transfer standards in 5 nm to 250 nm wavelength region for the past several years. These silicon photodiodes have significant cost and performance advantage over other types of transfer standards used by NIST in this wavelength range. However, quantum efficiency of these devices degrade by about a couple of percent after exposure to 10 eV photons with 1016/cm2 fluence. Recognizing that the 60 oxynitride front window leads to exposure induced instability, diodes with platinum silicide (PtSi) front window leads to exposure induced instability, diodes with platinum silicide (PtSi) front window were fabricated recently. Stability tests performed at NIST and LBL showed that quantum efficiency of PtSi window devices did not change after exposure to 10 eV, 1016 photons/cm2 and 100 eV 1018 photons/cm2 respectively. This suggests that the PtSi front window devices have outstanding stability. In the presently proposed work we plan to extend this work to demonstrate fabrication of silicon diodes with PtSi front window suitable to be used as transfer standards. Fabrication of avalanche photodiodes with PtSi-n-type silicon Schottky barrier construction will be investigated during the Phase 2. COMMERCIAL APPLICATIONS: Other than their use as transfer standards in EUV, the developed diodes will be extremely useful in other areas of science and technology like plasma diagnostics, EUV/deep UV lithography and photorefractive and phototherapeutic keratectomy
