SBIR-STTR Award

Development of high quality 4H silicon carbide (SiC) substrates will be pursued under the SBIR Phase I program. The Company has developed a unique and proprietary technique for making such substrates. A number of characterization tasks will also be performed on the wafers produced under to proposed effort

In this project, INTRINSIC proposes to demonstrate production quality 3-inch semi-insulating SiC wafers based on the successful results obtained in the Phase I effort. The objectives of the Phase II project are to expand the ultrahigh purity (UHP) semi-insulating SiC wafer size from 2-inch to 3-inch with high yield, high crystal quality and reduced impurities. The wafers will be polished via INTRINSIC’s proprietary chemical mechanical polishing (CMP) technique.

Keywords:
Insulating Substrates, Silicon Carbide, Microwave Materials, Single Crystal Growth Purification, Wafer Manufacturing, Chemical Mechanical Polishing (C