a novel non-contact non-invasive infrared (IR) sensor is proposed for in-situ diagnostics in CVD reactors. During CVD processes, the substrates will be heated. The IR sensor takes the advantage of the heated substrate as the sources of IR radiation. By sensing and analyzing the IR radiation from a substrate, the substrate surface can be probed. Moreover, low temperature silicon epitaxy has been chosen as the testvehicle, and the needs of a sensor for monitoring and control of crltical parameters in an epitaxial CVD reactor will be identified. Our goal is to assess the feasibility of this IR sensor for probing semiconductor surfaces and examine the possibilities of using this sensor to fulfill the monitoring need in epitaxial cvd processes. After successful demonstration of the Phase I research, the novel sensor will be incorporated into candidate manufacturing tools for real-time process monitoring and control. The smart sensor offers more plexibilities in controlling critical manufacturing processes to meet the stringent requirements of the future generation of devices. It can be integrated in the future manufacturing tool (cluster tool) for real-time process monitoring and control.
