SBIR-STTR Award

High-Voltage Intelligent Power Distribution Solution
Award last edited on: 1/26/2015

Sponsored Program
SBIR
Awarding Agency
DOD : Army
Total Award Amount
$836,656
Award Phase
2
Solicitation Topic Code
A12-118
Principal Investigator
David Backus

Company Information

Global Embedded Technologies Inc (AKA: Global ET)

23900 Freeway Park Drive
Farmington Hills, MI 48335
   (248) 888-9696
   info@globalet.com
   www.globalet.com
Location: Single
Congr. District: 14
County: Oakland

Phase I

Contract Number: ----------
Start Date: ----    Completed: ----
Phase I year
2013
Phase I Amount
$96,095
Future military vehicle systems require 600VDC power buses to improve mobility and save fuel through hybrid power system configurations. This is a compelling proposition at a time when the military needs to find ways to address decreasing budgets, while increasing capability. High voltage systems are just now becoming requirements on future military vehicle systems. This paradigm shift in requirements results in technology gaps, unmet needs, and opportunities. This SBIR topic and recent vehicle requirements from major military vehicle manufacturers validate the need for an intelligent high voltage power distribution solution. Global ET?s solution will be a unique combination of SiC technology, compact and efficient power electronics, software features, and configurability.

Keywords:
Sic, Silicon Carbide, Solid State Power Control, Intelligent Power Distribution, Power Management, Power Control, Electronic Module

Phase II

Contract Number: ----------
Start Date: ----    Completed: ----
Phase II year
2014
Phase II Amount
$740,561
Silicon Carbide (SiC) semiconductors are enabling technologies which bring significant benefits to power distribution equipment for next generation ground vehicles. The high temperature performance and high temperature low on-resistance properties of SiC MOSFETs facilitate the realization of reliable electrical power systems. High voltage power distribution is an application particularly well suited for SiC in that its current density is eight times higher than competing silicon devices, resulting in more compact power system design elements. To take advantage of the high temperature capabilities of SiC, packaging and cooling methods must be developed to gain higher power density without sacrificing reliability. The proposed High Voltage Power Distribution Unit (HVPDU) will combine intelligent power control electronics from Global ET, industry leading SiC devices from GE, and advanced thermal management. The HVPDU will be a modular, smart, and high temperature capable, high voltage power distribution unit which can be rapidly integrated in military ground vehicle systems to enable high voltage DC electrical power distribution required for vehicle modernization programs and new vehicle platforms.

Keywords:
High Voltage Power Distribution, Power Control, Circuit Breaker, 600V, SiC, Silicon Carbide, High Power Density, High Temperature Power Electronics