SBIR-STTR Award

Rapid, contamination-free growth of larger size aluminum oxynitride (AlON) and aluminum nitride (AlN) single crystals
Award last edited on: 2/1/2013

Sponsored Program
SBIR
Awarding Agency
DOD : Army
Total Award Amount
$849,090
Award Phase
2
Solicitation Topic Code
A10-061
Principal Investigator
Yunjin Zhang

Company Information

General Opto Solutions LLC

1366 Ridge Master Drive
State College, PA 16803
   (814) 238-5982
   info@gos-us.com
   www.gos-us.com
Location: Single
Congr. District: 15
County: Centre

Phase I

Contract Number: ----------
Start Date: ----    Completed: ----
Phase I year
2011
Phase I Amount
$119,451
In this project, we will develop and demonstrate an innovative process for growing large size single crystal aluminum oxynitride (AlON). The proposed process is not only contamination-free but also preventing volatilization and maintaining the stoichiometry of the sample materials. This is particularly important to grow large size AlON single crystal because it can be decomposed at the melting temperature without proper environmental control. Furthermore, it is a rapid growing process so that it can be scaled up for highly efficient and low-cost production of large size AlON single crystals. AlON single crystal samples with all the required properties ( e.g., > 2 cubic millimeters, 80% visible in-line transmittance, stoichiometric composition, optically isotropic single crystals., and the acceptable cubic elastic constants) will be grown at the Phase I stage. A higher quality (e.g., 85% visible in-line transmittance) and larger size (50 millimeter diameter x 25 mm millimeter thick) will be developed at the Phase II stage by refining and optimizing the growing method and procedures developed at the Phase I stage.

Keywords:
Alon Single Crystals, Contamination-Free Growth, Rapid Growth, Transparent Armor, Semiconductor Wafer, Ir Window, Stoichiometric Control

Phase II

Contract Number: ----------
Start Date: ----    Completed: ----
Phase II year
2012
Phase II Amount
$729,639
The objective of this SBIR Phase II effort is to grow larger size (50 mm diameter x 25 mm thick or larger) single crystals of aluminum oxynitride (AlON) and aluminum nitride (AlN) by refining and optimizing the rapid and contamination free growth method developed at the Phase I stage. The major properties of the single crystals will be quantitatively characterized and evaluated. The crystals should be at the single crystal phase, have a high linear transmittance (85 % or higher) over the entire UV-VIS-IR spectral range, and are optically isotropic. Elastic constants and dielectric properties of larger size samples (50 mm diameter x 25 mm thick, developed at the Phase II stage) will be measured by ultrasonic pulse echo technique and compared with the data obtained from the small samples (~ 2 mm cube) measured by resonant ultrasound spectroscopy (RUS). Phase II effort also includes investigating the killer applications of these unique single crystals and commercializing them such as (1) providing the critical technical data for studying the materials in extreme dynamic environments (such as transparent armors), (2) broadband, high strength optical windows and domes, (3) high power electronic substrates, and (4) robust, broad temperature range actuators and sensors.

Keywords:
Alon Single Crystal, Aln Single Crystal, Contamination-Free Growth, Transparent Armor, Optical Windows And Domes, Electronic Substrate, Materials In Extreme Dynamic Environmen