Inlustra Technologies and the University of California, Santa Barbara propose a Phase II STTR project to grow and characterize single-crystal boules of gallium nitride (GaN) along non-polar directions. These boules will have sufficient size to yield multiple two-inch (50.8 mm) diameter non-polar GaN substrates with n-type conductivity. During Phase II, GaN boules will be grown from high-quality non-polar GaN seed wafers initially developed during and subsequent to the Phase I effort. These 50.8 mm seed wafers will have smooth surfaces, low average microscopic defect density, and low residual strain factors critical to successful GaN boule growth. Inlustra personnel will initially focus on seed wafer refinement, and then transition into development of optimal bulk GaN growth conditions for each non-polar seed wafer orientation. By the end of the program, boules of 50.8 mm diameter and at least 15 mm thickness will be sliced into free-standing, n-type conductive non-polar GaN substrates. UCSB personnel will conduct extensive micro¬structural, optical, and electrical characterization on seed wafers, boules, and the non-polar GaN substrates derived from them. Regular feedback on crystal surface and microstructural quality in particular will provide Inlustra with the means of improving key GaN crystal growth parameters.
Keywords: Gallium Nitride, Gan, Single Crystal, Growth, Boule, Non-Polar
