SBIR-STTR Award

Influence of Temperature on Ic Failure Mechanisms
Award last edited on: 9/11/2002

Sponsored Program
SBIR
Awarding Agency
DOD : Army
Total Award Amount
$423,917
Award Phase
2
Solicitation Topic Code
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Principal Investigator
Milton Palmer

Company Information

Ramsearch Company

2128 Espey Court Suite 8
Crofton, MD 21114
   (301) 858-0360
   N/A
   N/A
Location: Single
Congr. District: 05
County: Anne Arundel

Phase I

Contract Number: 90ETD-114
Start Date: 00/00/00    Completed: 00/00/00
Phase I year
1990
Phase I Amount
$50,000
The purpose of this project is to investigate microcircuit reliability in the temperature range of -55 deg c to 125 deg , identify temperature dependence of all microcircuit failure mechanisms, identify existing models, identify gaps in the existing models and, wherever the data exists, formulate new models where there are none. This will lay the foundation for the phase U project which will refine and validate the models proposed in phase U. The key factor is to determine the temperature dependence of microcircuit failure mechanisms. This requires the investigation of the various physics of failure mechanisms and modes of failure for microelectronic devices. The final report will include the temperature dependent equations which govern electronic equipment failures. These equations may be functions of absolute temperature, the temperature change magnitude, rate of temperature change, temperature history, or spatial temperature gradients. We will not back-out temperature dependencies from mil-hdbks or industry handbooks in which the actual cause of failure was not appropriately identified. A discussion of temperature dependent failure mechanisms for microelectronic devices forms the body of this proposal.

Phase II

Contract Number: DAAL01-91-C-0142
Start Date: 8/16/1991    Completed: 9/4/1993
Phase II year
1991
Phase II Amount
$373,917
Reliability improvement of electronic equipment has focused to a large portion on the reduction in temperature, treating temperature as a harmful failure causing stress. To assess the impact of temperature onIC failure, a extensive literature research was conducted on the temperature related failure mechanisms found in microelectronic devices, in phase I of this project. Only a few of the failure mechanisms were found to be dependent on temperature, and it is not clear how strongly dependent they are in the range of temperature between -55 degrees C to 125 degrees C (average device junction temperature). It is concluded that the use of the Arrhenius temperature relationship as the dominant acceleration model is probably misleading in this temperature range. The goal fo the Phase II effort is to address accurate formulation of the temperature dependence in the -55 degree C to 125 degree C range.