In this project, Arktonics proposes to develop monolithically integrated GeSn photodetectors on Si for high performance IR imaging sensors. The proposed sensing materials, GeSn semiconducting alloys, have spectral sensitivity that could cover a broad wavelength range from SWIR, MWIR, to LWIR. The GeSn sensor array could be manufactured using standard IC industry techniques for high volume production, high reliability, and low cost. The proposed technology could be disruptive for IR imaging market. This Phase-I project is focused on the feasibility study by i) conducting theoretical modeling and experimental investigation of different GeSn growth techniques to characterize the materials to effectively evaluate the best technical pathway for CMOS integration and ii) conducting preliminary device design simulation and prototype device development to establish the baseline characteristics.
